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Band structure of silicene on zirconium diboride (0001) thin-film surface: Convergence of experiment and calculations in the one-Si-atom Brillouin zone

机译:二硼化锆(0001)薄膜表面上硅的能带结构:单硅原子布里渊区中实验和计算的收敛

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摘要

So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB_2(0001) surface and its band structure. In particular, by representing the band structure in a large Brillouin zone associated with a single Si atom, it is found that the imaginary part of the one-particle Green's function follows the spectral weight observed in ARPES spectra. By additionally varying the in-plane lattice constant, the results of density functional theory calculations and ARPES data obtained in a wide energy range converge into the “planarlike” phase and provide the orbital character of electronic states in the vicinity of the Fermi level. It is anticipated that the choice of a smaller commensurate unit cell for the representation of the electronic structure will be useful for the study of epitaxial two-dimensional materials on various substrates in general.
机译:到目前为止,通过第一性原理计算再现外延硅的角分辨光电子(ARPES)光谱是一项艰巨的任务。在这里,我们报告有关与ZrB_2(0001)表面上的硅的结构构型及其能带结构有关的先前有争议的问题的解决方案。特别地,通过表示与单个Si原子相关的大布里渊区中的能带结构,发现单粒子格林函数的虚部遵循在ARPES光谱中观察到的光谱权重。通过另外改变面内晶格常数,在很宽的能量范围内获得的密度泛函理论计算结果和ARPES数据收敛到“平面”相,并提供费米能级附近的电子态的轨道特性。可以预料的是,选择较小的相应的单位晶格来表示电子结构通常将对研究各种基板上的外延二维材料有用。

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